On the design and implementation of transmission lines in commercial SiGe HBT BiCMOS processes

Author

Morton, Matt ; Andrews, Joel ; Lee, Jongsoo ; Papapolymerou, John ; Cressler, John D. ; Cho, Daehyung ; Hong, Kyushik ; Shin, Heonjong ; Park, Kangwook ; Yi, Sangdon

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

53

Lastpage

56

Abstract

This paper examines the feasibility of implementing transmission lines in a commercially-available SiGe HBT BiCMOS technology. Thin film microstrip transmission lines, using the top and bottom metalization layers (with a 3.24 μm separation), from a 4 layer metal process SiGe HBT technology were designed, fabricated, and measured up to 110 GHz. These measured results were compared to full wave EM simulation results to gain additional design insight. Additional EM simulations were used to explore the effects of design rule changes which do not allow for large extents of ground plane without slotting.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIMIC; heterojunction bipolar transistors; integrated circuit measurement; integrated circuit modelling; microstrip lines; semiconductor materials; 110 GHz; 3.24 micron; HBT BiCMOS processes; SiGe; full wave EM simulation; slotted ground plane design rules; thin film microstrip transmission lines; top/bottom metalization layers; BiCMOS integrated circuits; Coplanar waveguides; Costs; Foundries; Germanium silicon alloys; Heterojunction bipolar transistors; Microstrip; Silicon germanium; Transmission line measurements; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398165

Filename

1398165