Edge characterization of 3d silicon sensors after bump-bonding with the ATLAS pixel readout chip

3D silicon sensors with electrodes penetrating the full substrate thickness, different electrode configurations and with active edges, where bump-bonded to the ATLAS pixel readout chip FE-I3 in 2006. Their characterization included electrical tests in laboratory, tests with beam and radioactive sources. Noise figures after bump bonding varied from 190 to 290 electrons, in agreement with the different electrode density of the three 3D configurations. This paper will reports beam results on the edge sensitivity, electrode response and efficiency at different angles of 3D sensors, fabricated at Stanford and bump-bonded to the ATLAS FE-I3 front end chip, before and after irradiation to 10¹⁵ high energy protons per cm².