High-speed SiGe HBT technology and applications to mm-wave circuits

Author

Meister, T.F. ; Knapp, H. ; Schäfer, H. ; Aufinger, K. ; Stengl, R. ; Boguth, S. ; Schreiter, R. ; Rest, M. ; Perndl, W. ; Wurzer, M. ; Böttner, T. ; Böck, J.

Author_Institution

Infineon Technol., Munich, Germany

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

61

Lastpage

64

Abstract

A SiGe bipolar technology for high frequency applications is presented. A transit frequency of 206 GHz, a maximum oscillation frequency of 200 GHz and a ring oscillator gate delay time of 3.9 ps have been obtained. With a 110 GHz dynamic frequency divider, a 86 GHz static frequency divider, a 52 GHz dual modulus 256/257 prescaler and a 98 GHz VCO state of the art high frequency circuits could be realized in this SiGe technology.

Keywords

Ge-Si alloys; MMIC frequency convertors; bipolar MIMIC; frequency dividers; heterojunction bipolar transistors; integrated circuit design; integrated circuit measurement; millimetre wave bipolar transistors; semiconductor materials; voltage-controlled oscillators; 110 GHz; 200 GHz; 206 GHz; 3.9 ps; 52 GHz; 86 GHz; 98 GHz; SiGe; SiGe bipolar technology; VCO; dual modulus prescaler; dynamic frequency divider; high frequency circuits; high-speed SiGe HBT technology; maximum oscillation frequency; mm-wave circuits applications; ring oscillator gate delay time; static frequency divider; transit frequency; Boron; Circuits; Delay; Doping profiles; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Ring oscillators; Silicon germanium; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398167

Filename

1398167