DocumentCode
2623005
Title
Gettering of metals to nanocavities in silicon
Author
Kinomura, A. ; Wong-Leung, J. ; Petravic, M. ; Williams, J.S.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
1996
fDate
8-11 Dec 1996
Firstpage
474
Lastpage
478
Abstract
Nanocavities, produced by high dose hydrogen implantation and subsequent annealing in silicon, have been found to provide favourable sites for the gettering of a range of metallic impurities. In this work, the gettering of high concentrations of Au and Cu to cavities is illustrated. In addition, it is shown that low concentrations of Cu (well below the solid solubility limit in silicon) can also be very efficiently gettered to nanocavities
Keywords
Rutherford backscattering; annealing; elemental semiconductors; getters; impurity distribution; ion implantation; nanostructured materials; secondary ion mass spectra; silicon; transmission electron microscopy; voids (solid); RBS; SIMS; Si; Si:Au; Si:Cu; XTEM; annealing; gettering; high dose H implantation; impurity concentrations; metallic impurities; nanocavities; solid solubility limit; Annealing; Gettering; Gold; Hydrogen; Implants; Impurities; Inorganic materials; Silicon; Solids; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-3374-8
Type
conf
DOI
10.1109/COMMAD.1996.610169
Filename
610169
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