A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs

Author

Voinigescu, S.P. ; Dickson, T.O. ; Beerkens, R. ; Khalid, I. ; Westergaard, P.

Author_Institution

Edward S. Rogers Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

111

Lastpage

114

Abstract

The paper presents an overview of Si MOSFET, SiGe HBT, and InP HBT device and circuit performance for broadband and tuned millimeter-wave applications. Implementations of CMOS-only, SiGe-HBT-only, SiGe BiCMOS, and InP-HBT 30-80 Gb/s high-speed circuit in production 130-nm SiGe BiCMOS and InP HBT technologies are compared.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; millimetre wave integrated circuits; silicon; 130 nm; 30 to 80 Gbit/s; CMOS high-speed circuit; InP; Si; SiGe; high-speed IC; indium phosphide HBT technology; millimeter-wave IC; silicon CMOS technology; silicon MOSFET devices; silicon-germanium BiCMOS technology; silicon-germanium HBT devices; BiCMOS integrated circuits; CMOS technology; Circuit optimization; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; MOSFET circuits; Millimeter wave integrated circuits; Millimeter wave technology; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398180

Filename

1398180