DocumentCode
2623176
Title
Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors
Author
Jagannathan, B. ; Greenberg, D. ; Sanderson, D.I. ; Rieh, J.-S. ; Pekarik, J. ; Plouchart, J.O. ; Freeman, G.
Author_Institution
SRDC, IBM Microelectron., USA
fYear
2004
fDate
8-10 Sept. 2004
Firstpage
115
Lastpage
118
Abstract
DC and RF characteristics of Si nFETs and SiGe HBTs are compared in IBM´s leading-edge production RFCMOS and BiCMOS technologies at 90 and 130 nm nodes respectively. Underlying performance trade-offs to achieve low power circuit operation are investigated.
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; characteristics measurement; field effect transistors; heterojunction bipolar transistors; radiofrequency integrated circuits; silicon; 130 nm; 90 nm; BiCMOS technology; CMOS technology; DC characteristics measurements; RF characteristics measurements; Si; SiGe; silicon nFET; silicon-germanium HBT; silicon-germanium transistors; state-of-the-art RF transistors; BiCMOS integrated circuits; CMOS technology; Costs; FETs; Germanium silicon alloys; Heterojunction bipolar transistors; Production; Radio frequency; Scattering parameters; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN
0-7803-8703-1
Type
conf
DOI
10.1109/SMIC.2004.1398181
Filename
1398181
Link To Document