DocumentCode
2623240
Title
Modeling of distortion in bipolar transistors - a review
Author
Schroter, M. ; Sakalas, P. ; Tran, H.
Author_Institution
Univ. of Technol., Dresden, Germany
fYear
2004
fDate
8-10 Sept. 2004
Firstpage
131
Lastpage
134
Abstract
An overview on modeling HF distortion in bipolar transistors is given. "Modeling" includes theoretical investigations, which are generally applicable to bipolar transistors, as well as compact models and their experimental verification for recent SiGe technologies. Also, 1D device simulation results provide additional insight into the mechanisms.
Keywords
bipolar transistors; distortion; semiconductor device models; 1D device simulation; HF distortion modeling; SiGe; bipolar transistors; silicon-germanium technologies; theoretical investigations; Bipolar transistors; Communication systems; Electron devices; Fabrication; Frequency; Germanium silicon alloys; High definition video; Integrated circuit technology; Nonlinear distortion; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN
0-7803-8703-1
Type
conf
DOI
10.1109/SMIC.2004.1398185
Filename
1398185
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