DocumentCode
2624192
Title
Characterization of SiPM: Temperature dependencies
Author
Ramilli, Marco
Author_Institution
UniversitÃ\xa0 degli Studi dell¿Insubria, Dipartimento di Fisica e Matematica, Via Valleggio 11, 22100 Como, Italy
fYear
2008
fDate
19-25 Oct. 2008
Firstpage
2467
Lastpage
2470
Abstract
Within RAPSODI1 novel types of Silicon Photo-Multiplier (SiPM) from different suppliers were investigated. The main parameters: dark count rate, amplification, dynamic range, quantum detection efficiency and optical cross-talk have been studied to qualify the detectors. Results demonstrate the possibility to apply this detection technology to intense photon fluxes detection as well as to low plurality ones. Characterization protocol for a full SiPM qualification was developed. The most important result is the demonstration of temperature independence of SiPM gain versus over voltage.
Keywords
Dynamic range; Optical crosstalk; Optical detectors; Photonics; Protocols; Qualifications; Silicon; Stimulated emission; Temperature dependence; Voltage control; Characterization; Silicon Photo Multipliers; Temperature dependance;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location
Dresden, Germany
ISSN
1095-7863
Print_ISBN
978-1-4244-2714-7
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2008.4774854
Filename
4774854
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