Fully 3-Dimensional NOR Flash Cell with Recessed Channel and Cylindrical Floating Gate - A Scaling Direction for 65nm and Beyond

Author

Sim, Sang-Pil ; Kim, Kwang Soo ; Lee, Heon Kyu ; Han, Jung In ; Kwon, Wook Hyun ; Han, Jee Hoon ; Lee, Bong Yong ; Jung, Cheol ; Jeung Hwan Park ; Dae Joung Kim ; Jang, Dae Hyun ; Lee, Won Hee ; Chankwang Park ; Kinam Kim

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin

fYear

0

fDate

0-0 0

Firstpage

17

Lastpage

18

Abstract

For the first time, a fully 3-dimensional (3-D) flash cell with recessed channel and cylindrical floating gate is successfully integrated with 65nm MLC NOR flash technology. Key process technologies to achieve the novel cell structures are shown to be highly feasible. Superior scalability and comparable device characteristics including V _th distribution and tunnel oxide reliability are proved through 512Mb full chip integration. Intrinsic immunity on the short channel effect of this 3-D cell opens a promising path for the continued scaling of the floating gate flash memories for 65nm and beyond

Keywords

NOR circuits; flash memories; integrated circuit reliability; 3D flash cell; 512 MByte; 65 nm; MLC NOR flash technology; cylindrical floating gate; full chip integration; recessed channel; short channel effect; tunnel oxide reliability; Channel hot electron injection; Counting circuits; Degradation; Flash memory; Interference; Lithography; Nonvolatile memory; Oxidation; Robustness; Scalability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705195

Filename

1705195