Pre-Metal Dielectric Stress Engineering by a Novel Plasma Treatment and Integration Scheme for nMOS Performance Improvement

Author

Jeong, Yong-kuk ; Shin, Dong Suk ; Kim, Andrew ; Yoon, Il Young ; Nam, Seo-woo ; Lee, Seung-jin ; Park, Ki-kwan ; Kim, K.C. ; Shin, Hong-jae ; Roh, Ki Bong ; Kang, Ki-ho ; Choi, Yong-ho ; Seo, Gi-ho ; Lee, Kwon ; Chu, Kang Soo ; Lee, Nae-In

Author_Institution

Adv. Process Dev. Team, Samsung Electron. Co., Ltd., Kyungki-Do

fYear

0

fDate

0-0 0

Firstpage

136

Lastpage

137

Abstract

For the first time, a transistor performance improvement is achieved by increasing the tensile stress of O₃-TEOS pre-metal dielectric (PMD) using a novel plasma treatment and integration scheme. Plasma-treated O₃-TEOS films show more tensile stress value about twice than that of an as-deposited O₃-TEOS film. The novel process shows up to 10% improvement of I_on for nMOS without any cost of pMOS degradation

Keywords

MOSFET; dielectric materials; dielectric properties; plasma materials processing; stress effects; nMOS performance improvement; plasma treatment; plasma-treated TEOS films; pre-metal dielectric stress engineering; tensile stress; transistor performance improvement; Compressive stress; Dielectrics; MOS devices; Performance gain; Plasma applications; Plasma measurements; Plasma simulation; Stress measurement; Tensile stress; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705254

Filename

1705254