• DocumentCode
    2625994
  • Title

    Electrical performance and reliability of n-MOSFET´s with gate dielectrics fabricated by different techniques

  • Author

    Xu, Zeng ; Lai, P.T. ; Ng, W.T.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
  • fYear
    1994
  • fDate
    34533
  • Firstpage
    18
  • Lastpage
    21
  • Abstract
    In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N2O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH3 nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress
  • Keywords
    MOSFET; dielectric thin films; nitridation; semiconductor device reliability; N2O; N2O nitridation; NH3; NH3 nitridation; NMOSFET; electrical characteristics; gate dielectrics; n-MOSFET; n-channel devices; reliability; stability; Degradation; Dielectrics; Electron mobility; Electron traps; Interface states; MOSFET circuits; Nitrogen; Scattering; Stress; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong
  • Print_ISBN
    0-7803-2086-7
  • Type

    conf

  • DOI
    10.1109/HKEDM.1994.395138
  • Filename
    395138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2625994