• DocumentCode
    262649
  • Title

    Session 19 overview: Nonvolatile memory solutions: Memory subcommittee

  • Author

    Han, Jin-Man ; Yamauchi, Tadaaki

  • Author_Institution
    Samsung, Hwaseong, Korea
  • fYear
    2014
  • fDate
    9-13 Feb. 2014
  • Firstpage
    324
  • Lastpage
    325
  • Abstract
    Strong market demands of diverse non-volatile memory technologies show continuing increase in density, reliability, and performance. This year the leading edge process node for NAND Flash is scaled down to the minimum feature size of 16nm, and three-dimensional vertical NAND has been demonstrated. In addition, Flash controllers contribute to the higher reliability and performance on such advanced node. Emerging memories such as Resistive RAM (ReRAM) are continuing to show significant performance progress.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4799-0918-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.2014.6757565
  • Filename
    6757565
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=262649