• DocumentCode
    262663
  • Title

    Session 25 overview: High-bandwidth low-power DRAM and I/O: Memory subcommittee

  • Author

    Kang, Uksong ; Sung, James

  • Author_Institution
    Samsung Electronics, Hwasung, Korea
  • fYear
    2014
  • fDate
    9-13 Feb. 2014
  • Firstpage
    428
  • Lastpage
    429
  • Abstract
    Requirements for high bandwidth and low power continue to increase in servers and consumer electronics. There are significant challenges in DRAMs to meet all such needs in various applications. In ISSCC 2014, the first LPDDR4 DRAM for mobile applications is demonstrated which has an integrated ECC engine for low-power operation. Next, the first High-Bandwidth Memory (HBM) with 4 TSV stacked layers achieving 128GB/s bandwidth is disclosed. Also, new circuits to reduce standby and I/O power in GDDR5M are shown. The papers in this session present the latest technologies and circuit techniques to improve the performance and power in DRAMs.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4799-0918-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.2014.6757571
  • Filename
    6757571