DocumentCode
262663
Title
Session 25 overview: High-bandwidth low-power DRAM and I/O: Memory subcommittee
Author
Kang, Uksong ; Sung, James
Author_Institution
Samsung Electronics, Hwasung, Korea
fYear
2014
fDate
9-13 Feb. 2014
Firstpage
428
Lastpage
429
Abstract
Requirements for high bandwidth and low power continue to increase in servers and consumer electronics. There are significant challenges in DRAMs to meet all such needs in various applications. In ISSCC 2014, the first LPDDR4 DRAM for mobile applications is demonstrated which has an integrated ECC engine for low-power operation. Next, the first High-Bandwidth Memory (HBM) with 4 TSV stacked layers achieving 128GB/s bandwidth is disclosed. Also, new circuits to reduce standby and I/O power in GDDR5M are shown. The papers in this session present the latest technologies and circuit techniques to improve the performance and power in DRAMs.
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
978-1-4799-0918-6
Type
conf
DOI
10.1109/ISSCC.2014.6757571
Filename
6757571
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