• DocumentCode
    2627767
  • Title

    Radiation characteristics of hall-sensor on the base of gallium arsenide

  • Author

    Karlova, G.F. ; Gradoboev, A.V.

  • Author_Institution
    Tomsk Univ. of Control Syst. & Radioelectron., Tomsk, Russia
  • fYear
    2013
  • fDate
    12-13 Sept. 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Influence of gamma radiation on sensors based on GaAs is considered. The volt-ampere characteristics and the noise spectral density of magnetic field sensors before and after irradiations were investigated. It was found stabilizing effect of gamma radiation on sensors with the dose (8-10) ·103 Gy and destroying effect at the greater doses.
  • Keywords
    Hall effect devices; III-V semiconductors; gallium arsenide; gamma-ray effects; magnetic field measurement; magnetic sensors; Hall-sensor; gallium arsenide; gamma radiation; magnetic field sensors; noise spectral density; radiation characteristics; volt-ampere characteristics; Charge carriers; Magnetic sensors; Noise; Radiation effects; Sensor phenomena and characterization; Voltage measurement; gallium arsenide; gamma-quanta; sensor of magnetic field; volt-ampere characteristics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Control and Communications (SIBCON), 2013 International Siberian Conference on
  • Conference_Location
    Krasnoyarsk
  • Print_ISBN
    978-1-4799-1060-1
  • Type

    conf

  • DOI
    10.1109/SIBCON.2013.6693581
  • Filename
    6693581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2627767