Characterization and modeling of RF substrate coupling effects due to vertical interconnects in 3D integrated circuit stacking

Author

Eid, E. ; Lacrevaz, T. ; Bermond, C. ; de Rivaz, S. ; Capraro, S. ; Roullard, J. ; Cadix, L. ; Fléchet, B. ; Farcy, A. ; Ancey, P. ; Calmon, F. ; Valorge, O. ; Leduc, P.

Author_Institution

IMEP-LAHC, Univ. de Savoie, Le Bourget du Lac, France

fYear

2010

fDate

9-12 May 2010

Firstpage

35

Lastpage

38

Abstract

This paper discusses substrate coupling effects in 3D integrated circuits carried by TSV interconnects (Through Silicon Vias). These electrical couplings lead to several impacts on 3D circuit performance. RF (Radio Frequency) characterizations have been performed on dedicated test structures in order to extract electrical models of substrate coupling and make obvious this phenomenon. New modeling tools for predictive studies have been validated thanks to a good compatibility between RF measurements and RF models.

Keywords

integrated circuit interconnections; radiofrequency integrated circuits; radiofrequency measurement; 3D integrated circuit stacking; RF measurements; RF substrate coupling effects; electrical models; radio frequency characterizations; substrate coupling; through silicon vias interconnects; vertical interconnects; Circuit optimization; Coupling circuits; Integrated circuit interconnections; Integrated circuit modeling; Predictive models; Radio frequency; Silicon; Stacking; Three-dimensional integrated circuits; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Propagation on Interconnects (SPI), 2010 IEEE 14th Workshop on

Conference_Location

Hildesheim

Print_ISBN

978-1-4244-7611-4

Type

conf

DOI

10.1109/SPI.2010.5483585

Filename

5483585