Pulsed Laser Assisted Chemical Etch for analytic surface preparation

Author

Chivas, Robert ; Silverman, Scott ; Dandekar, Niru

Author_Institution

Varioscale, Inc., San Marcos, CA, USA

fYear

2012

fDate

15-19 April 2012

Abstract

Pulsed Laser Assisted Chemical Etching (PLACE) is an advanced method of surface preparation for analytic investigations such as: Focused Ion Beam (FIB) circuit edit, Failure Analysis chemical processes (poly-Si etch), Backside SIMS and Optical techniques such as Photoemission Microscopy. PLACE can achieve ultra-high purity and fine dimensional control since it is a dry process relying on pyrolytic vapor phase reactions initiated, and constrained, by a pulsed laser.

Keywords

elemental semiconductors; etching; failure analysis; focused ion beam technology; laser beam etching; optical microscopy; silicon; FIB circuit edit; PLACE; Si; analytic surface preparation; backside SIMS; dry process; failure analysis chemical processes; fine dimensional control; focused ion beam; optical techniques; photoemission microscopy; poly-silicon etch; pulsed laser assisted chemical etching; pyrolytic vapor phase reactions; ultra-high purity; Chemical lasers; Etching; Laser beams; Rough surfaces; Silicon; Surface roughness; SIMS; analytic surface prep; backside; chemical; etch; laser; poly-Si;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241787

Filename

6241787