A new intelligent power module with reverse conducting IGBTs for motor drives up to 2 kW

Author

Frank, Wolfgang ; Song, Junho ; Lee, Junbae ; Chung, Daewoong ; Suh, Bumseok ; Stipan, Peter

Author_Institution

Infineon Technol. Germany, Neubiberg, Germany

fYear

2010

fDate

6-8 Sept. 2010

Abstract

This paper presents an innovative intelligent power module in a molded dual-in-line package. It combines new reverse conducting IGBTs and a silicon-on-insulator (SOI) gate drive IC. It features internal schematics using the combination of PCB and lead-frame without using expensive heat transfer materials, such as ceramics. We provide a description of the module, its dimensions, and its internal schematics. Explanations of the gate driver and IGBT performance are followed by an application test.

Keywords

drives; insulated gate bipolar transistors; power bipolar transistors; power transistors; printed circuits; silicon-on-insulator; PCB; dual-in-line package; innovative intelligent power module; lead-frame; motor drives; power 2 kW; reverse conducting IGBT; silicon-on-insulator gate drive IC; Compounds; Heat sinks; Insulated gate bipolar transistors; Integrated circuits; Inverters; Logic gates; Silicon on insulator technology; High voltage IC´s; IGBT; IPM (Intelligent Power Module); SOI-device;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference (EPE/PEMC), 2010 14th International

Conference_Location

Ohrid

Print_ISBN

978-1-4244-7856-9

Type

conf

DOI

10.1109/EPEPEMC.2010.5606905

Filename

5606905