Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

We report extensive statistical NBTI reliability measurements of nanoscaled FETs of different technologies, based on which we propose a 1/area scaling rule for the statistical impact of individual charged gate oxide defects on the electrical characteristic of deeply scaled transistors. Among the considered technologies, nanoscaled SiGe channel devices show smallest time-dependent variability. Furthermore, we report comprehensive measurements of the impact of individual trapped charges on the entire FET ID-VG characteristic. Comparing with 3D atomistic device simulations, we identify several characteristic behaviors depending on the interplay between the location of the oxide defect and the underlying random dopant distribution.