• DocumentCode
    2635191
  • Title

    Patterned quantum dot lasers fabricated using electron beam lithography and selective area epitaxial growth

  • Author

    Elarde, V.C. ; Coleman, J.J. ; Bryce, A.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • fYear
    2005
  • fDate
    22-28 Oct. 2005
  • Firstpage
    600
  • Lastpage
    601
  • Abstract
    This paper demonstrates a fabrication process which allows the location and geometry of quantum dots to be explicitly defined using electron beam lithography and selective area metal-organic chemical vapor deposition crystal growth. In this study, these fabrication processes are described and results are presented demonstrating significantly improved performance of laser devices containing a patterned quantum dot active layer.
  • Keywords
    MOCVD; electron beam lithography; quantum dot lasers; semiconductor epitaxial layers; crystal growth; electron beam lithography; metal-organic chemical vapor deposition; patterned quantum dot active layer; patterned quantum dot lasers; selective area epitaxial growth; Electron beams; Epitaxial growth; Gallium arsenide; Inductors; Lithography; Optical control; Optical device fabrication; Quantum dot lasers; Quantum dots; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
  • Print_ISBN
    0-7803-9217-5
  • Type

    conf

  • DOI
    10.1109/LEOS.2005.1548148
  • Filename
    1548148