Quantum dot lasers and optoelectronic device integration

Author

Sears, K. ; Mokkapati, S. ; Buda, M. ; Lever, P. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2005

fDate

22-28 Oct. 2005

Firstpage

606

Lastpage

607

Abstract

This paper highlights quantum dot (QD) lasers and QD optoelectronic device integration. The emission spectrum, room temperature photoluminescence, and electroluminescence spectra of a 3-stacked InAs QD laser are presented. On the other hand, monolithic integration of QD devices is desirable for practical applications, as this would lead to low loss, high speed modules, operating at lower currents.

Keywords

III-V semiconductors; electroluminescence; indium compounds; integrated optoelectronics; monolithic integrated circuits; optical losses; photoluminescence; quantum dot lasers; stimulated emission; 3-stacked InAs QD laser; electroluminescence spectra; emission spectrum; high speed modules; low loss modules; low-current operation; monolithic integration; optoelectronic device integration; photoluminescence; quantum dot lasers; room temperature; Chemical lasers; Electroluminescence; Laser excitation; Laser modes; Optoelectronic devices; Quantum dot lasers; Quantum well lasers; Stationary state; Threshold current; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548151

Filename

1548151