DocumentCode
2635277
Title
Dislocation engineered silicon for light emission
Author
Homewood, K.P. ; Lourengo, M.A. ; Milosavljevic, M. ; Shao, G. ; Gwilliam, R.M.
Author_Institution
Adv. Technol. Inst., Surrey Univ., Guildford
fYear
2005
fDate
22-22 Oct. 2005
Firstpage
625
Lastpage
626
Abstract
The paper outlined a new approach on dislocation engineering to make efficient light emitting diodes in silicon using otherwise conventional silicon processing. DELED (dislocation engineered light emitting diodes)was fabricated with erbium incorporated in the active region. Progress on tuning these devices from 1.5 to 1.6 mum by incorporation of additional optically active centres was demonstrated
Keywords
dislocations; elemental semiconductors; light emitting diodes; optical fabrication; optical tuning; silicon; DELED; Si; dislocation engineering; light emitting diodes; optically active centres; silicon; silicon processing; Erbium; Iron; Light emitting diodes; Luminescence; Optical materials; Photonic band gap; Silicon; Stimulated emission; Temperature; Thermal quenching;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-9217-5
Type
conf
DOI
10.1109/LEOS.2005.1548152
Filename
1548152
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