DocumentCode
2635280
Title
The Tungsten - P Type Silicon Point Contact Diode
Author
Kerecman, Albert J.
fYear
1973
fDate
4-6 June 1973
Firstpage
30
Lastpage
34
Abstract
Video detection at 90 GHz, 890 GHz, 28.3 THz, and 474 THz is examined with respect to whisker advancement. Reproducible behavior of I-V curves is obtained and correlated with the RF data. A significant thermal effect is shown to compete with conventional barrier rectification. Micrographic analysis coupled with microhardness measurements clearly demonstrates that the tungsten whisker exerts sufficient pressure to deform the silicon surface of the diodes.
Keywords
Capacitance; Contacts; Electrons; Equivalent circuits; Etching; Schottky diodes; Semiconductor diodes; Silicon; Tungsten; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location
Boulder, CO, USA
Type
conf
DOI
10.1109/GMTT.1973.1123080
Filename
1123080
Link To Document