The failure mechanism re-investigation Of ESD device on EPI wafer

Author

Lee, Jian-Hsing ; Kung, Clak ; Kung, Ellis ; Shih, J.R.

Author_Institution

Component & Syst. Dev. Div., R&D, Real Test Co., Hsinchu, Taiwan

fYear

2012

fDate

15-19 April 2012

Abstract

The ESD failure mechanism of the EPI wafer device is reinvestigated, which is caused by the low substrate resistance induced transient current crowding. We also demonstrate that putting the ESD device in the deep-NWell (DNW) can effectively eliminate the low substrate resistance effect because the device in the DNW can be isolated from the P+ substrate. The DNW can not only improve the HBM and MM threshold voltages for EPI wafer device but also improve the CDM threshold voltage for EPI wafer and bulk wafer devices.

Keywords

electrostatic discharge; CDM threshold voltage; DNW; EPI wafer; ESD device; HBM threshold voltage; MM threshold voltage; P+ substrate isolation; bulk wafer device; charged-device model; deep-NWell; failure mechanism reinvestigation; human-body model; low substrate resistance effect; machine model; transient current crowding; Bipolar transistors; Capacitors; Electrostatic discharges; Failure analysis; Stress; Substrates; Voltage measurement; Charged-device model (CDM) style; Human-body Model (HBM); Machine Model (MM);

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241892

Filename

6241892