DocumentCode
2635380
Title
Design of monolithic image rejection mixer
Author
Yan, Pinpin ; Hong, Wei ; Chen, Jixin
Author_Institution
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
Volume
2
fYear
2010
fDate
17-20 Sept. 2010
Firstpage
1
Lastpage
3
Abstract
A image rejection mixer MMIC has been designed and implemented with 0.15μm GaAs pHEMT process, with the chip size of 1.36mm × 1.38mm. The mixer employs a balanced image rejection structure and resistive FET mixers. The measured conversion loss is less than 10.6dB in the frequency range of 24GHz to 40GHz and the image rejection is above 15dB.
Keywords
III-V semiconductors; MMIC mixers; field effect transistors; gallium arsenide; integrated circuit design; GaAs; MMIC; balanced image rejection structure; frequency 24 GHz to 40 GHz; monolithic image rejection mixer; pHEMT process; resistive FET mixers; size 0.15 mum; GaAs; MMIC; image rejection mixer;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals Systems and Electronics (ISSSE), 2010 International Symposium on
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6352-7
Type
conf
DOI
10.1109/ISSSE.2010.5607004
Filename
5607004
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