DocumentCode
2635475
Title
Power Amplification at 55-65 GHz with 18 GHz Gain-Bandwidth Product
Author
Raue, Jorg E.
fYear
1973
fDate
4-6 June 1973
Firstpage
60
Lastpage
62
Abstract
A high efficiency silicon avalanche diode power amplifier with 100-200 mW output power is described. Typical single stage gain of 20-22 dB with bandwidths exceeding 1 GHz has been achieved in production quantities. Best performance showed an 18 GHz voltage gain-bandwidth product.
Keywords
Bandwidth; Broadband amplifiers; Circuit optimization; Diodes; Gain; Power amplifiers; RLC circuits; Tuned circuits; Voltage; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1973 IEEE G-MTT International
Conference_Location
Boulder, CO, USA
Type
conf
DOI
10.1109/GMTT.1973.1123091
Filename
1123091
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