Effects of gate process on NBTI characteristics of TiN gate FinFET

Author

Kim, Jin Ju ; Cho, Moonju ; Pantisano, Luigi ; Chiarella, Thomas ; Togo, Mitsuhiro ; Horiguchi, Naoto ; Groeseneken, Guido ; Lee, Byoung Hun

Author_Institution

Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2012

fDate

15-19 April 2012

Abstract

NBTI characteristics of p-FinFET with TiN metal gates deposited by ALD or PVD method have been investigated in detail. NBTI lifetime of ALD-TiN gate device was better than that of PVD TiN gate device. The differences were primarily attributed to the differences in the thickness and quality of interfacial SiO₂ layer which was affected by an oxygen scavenging reaction of TiN layer. Also, NBTI characteristics were degraded at narrower FinFET in both ALD and PVD devices as the contribution from sidewall (110) region increased.

Keywords

MOSFET; atomic layer deposition; semiconductor device reliability; silicon compounds; titanium compounds; ALD gate device; NBTI characteristics; PVD method; SiO₂; TiN; atomic layer deposition; gate process; metal gate FinFET; oxygen scavenging reaction; p-FinFET; Electrodes; FinFETs; Logic gates; Stress; Threshold voltage; Tin; ALD; FinFET; NBTI; PVD; TiN;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2012 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4577-1678-2

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2012.6241913

Filename

6241913