New insights into gate-dielectric breakdown by electrical characterization of interfacial and oxide defects with reverse modeling methodology

A new methodology of defect characterization, through combination of measurements and simulations, is used to monitor the defect creation rate leading to gate-oxide breakdown. Two defect time-power creation rates were extracted, thus modifying the classical understanding of Weibull slope variation with oxide thickness. Based on our methodology, an explanation of the gate current increase prior to hard BD is proposed.