DocumentCode
2637407
Title
Tunnett diode oscillators for mm-wave wideband communication and for terahertz electronics
Author
Plotka, P.
Author_Institution
Semicond. Res. Inst., Tokyo
fYear
2006
fDate
22-24 June 2006
Firstpage
52
Lastpage
57
Abstract
70-706 GHz GaAs TUNNETTs, transit time diodes with tunneling injection of electrons were fabricated with molecular layer epitaxy. Their low noise makes them suitable for mm-wave and sub-mm-wave communication systems as generators or self-oscillating modulators. CW THz-wave TUNNETTs are compact and power-efficient as compared with other THz generators
Keywords
III-V semiconductors; epitaxial growth; gallium arsenide; millimetre wave diodes; submillimetre wave diodes; transit time devices; tunnel diode oscillators; wide band gap semiconductors; 70 to 706 GHz; GaAs; TUNNETT diode oscillators; mm-wave wideband communication; molecular layer epitaxy; self-oscillating modulators; sub-mm-wave communication systems; terahertz electronics; transit time diodes; tunneling injection; Electrons; Epitaxial growth; Frequency; Gallium arsenide; Millimeter wave communication; Oscillators; Power generation; Schottky diodes; Semiconductor diodes; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location
Gdynia
Print_ISBN
83-922632-2-7
Type
conf
DOI
10.1109/MIXDES.2006.1706535
Filename
1706535
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