Controlled super lateral growth enhancement of single pulse laser irradiation by heat-retaining layer

Author

Lin, Jia-Xing ; Chen, Hung-Tse ; Wu, Hisng-Hua ; Chen, Yu-Cheng ; Chen, Chi-Lin ; Chang, Chi-Ming ; Limanov, A.B. ; Chitu, Adrian M. ; van der Wilt, Paul ; Im, James S.

Author_Institution

Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2005

fDate

22-28 Oct. 2005

Firstpage

938

Lastpage

939

Abstract

Single-pulse excimer-laser-induced enhancement of lateral crystallization by applying a heat-retaining capping layer on amorphous silicon is well confirmed. Through analysis of polycrystalline silicon microstructure and of transient reflectance signal, we found that the capped sample had a 7 μm lateral growth, along with an 1800 ns increased melt duration, which is one order of magnitude larger than the uncapped sample.

Keywords

amorphous semiconductors; crystal microstructure; crystallisation; elemental semiconductors; excimer lasers; heat treatment; laser beam effects; reflectivity; silicon; solid-state phase transformations; Si; amorphous silicon; crystallization; heat-retaining capping layer; polycrystalline silicon microstructure; reflectance; single-pulse excimer-laser; super lateral growth enhancement; Crystallization; Laser beams; Laser sintering; Microstructure; Optical control; Optical pulses; Reflectivity; Silicon; Temperature control; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Print_ISBN

0-7803-9217-5

Type

conf

DOI

10.1109/LEOS.2005.1548312

Filename

1548312