DocumentCode
2639690
Title
150 GHz Band IMPATT Oscillators, Frequency Converters and Doublers
Author
Ohmori, M. ; Hirayama, M. ; Ishibashi, T.
Author_Institution
Musashino Electr. Commun. Lab., Nippon Telegraph & Telephone Public Corp., Musashino, Japan
fYear
1975
fDate
12-14 May 1975
Firstpage
219
Lastpage
221
Abstract
Si p+-n-n+ IMPATT oscillators, GaAs frequency converters and doublers at 150 GHz band were developed. Oscillator output power was 85 mW at 161 GHz with 2.8 percent efficiency. DC incremental conversion loss was 5.5 dB with a Schottky-barrier mixer.
Keywords
III-V semiconductors; IMPATT oscillators; elemental semiconductors; gallium arsenide; microwave frequency convertors; microwave mixers; silicon; DC incremental conversion loss; GaAs; IMPATT oscillators; Schottky-barrier mixer; Si; doublers; efficiency 2.8 percent; frequency 150 GHz; frequency 161 GHz; frequency converters; loss 5.5 dB; oscillator output power; power 85 mW; Circuit testing; Etching; Frequency conversion; Gallium arsenide; Millimeter wave communication; Millimeter wave technology; Oscillators; Power generation; Schottky diodes; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1975 IEEE-MTT-S International
Conference_Location
Palo Alton, CA
Type
conf
DOI
10.1109/MWSYM.1975.1123339
Filename
1123339
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