DocumentCode
2639696
Title
Characterization And Simulation Of Silicon Power Devices Up To Very High Temperatures
Author
Borthen, P. ; Wachutka, G.
Author_Institution
Munich Univ. of Technol.
fYear
2006
fDate
22-24 June 2006
Firstpage
612
Lastpage
614
Abstract
We investigated and calibrated physically-based high-temperature device models on the basis of measurements and simulations of industrial power MOSFETs and non-punch through (NPT) 600V IGBTs (both from Infineon AG) in a temperature range from room temperature up to 750 K
Keywords
insulated gate bipolar transistors; power MOSFET; power semiconductor devices; semiconductor device models; 600 V; 750 K; Infineon AG; NPT; high-temperature device models; high-temperature electrical measurements; model calibration; non-punch through IGBT; power MOSFET; silicon power devices; Bonding; Electric variables measurement; Insulated gate bipolar transistors; MOSFETs; Phase change materials; Power measurement; Predictive models; Silicon; Temperature distribution; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Proceedings of the International Conference
Conference_Location
Gdynia
Print_ISBN
83-922632-2-7
Type
conf
DOI
10.1109/MIXDES.2006.1706655
Filename
1706655
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