A 30GHz 2dB NF low noise amplifier for Ka-band applications

Author

Ma, Qian ; Leenaerts, D. ; Mahmoudi, R.

Author_Institution

Mixed-Signal Microelectron. Group, Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2012

fDate

17-19 June 2012

Firstpage

25

Lastpage

28

Abstract

A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25μm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8-2.2 dB has been measured at 26-32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP_1dB) is -11dBm and input IP3 is -1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including bond pads is 1mm×0.7mm.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; bipolar MIMIC; carbon; low noise amplifiers; millimetre wave amplifiers; BiCMOS technology; Ka-band application; LNA; SiGe:C; frequency 26 GHz to 32 GHz; gain 1 dB; gain 12.4 dB; gain 3 dB; low noise amplifier; noise figure 1.8 dB to 2.2 dB; power 98 mW; size 0.25 mum; BiCMOS integrated circuits; CMOS integrated circuits; Gain measurement; Low-noise amplifiers; Noise; Noise measurement; Transistors; Ka-band; SiGe:C BiCMOS technology; low noise amplifier (LNA);

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Conference_Location

Montreal, QC

ISSN

1529-2517

Print_ISBN

978-1-4673-0413-9

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2012.6242224

Filename

6242224