Research on packaging effects of three-axis SOI MEMS accelerometer

Author

Hung-Te Yang ; Yen-Fu Su ; Kuo-Ning Chiang

Author_Institution

Adv. Microsyst. Packaging & Nano-Mech. Res. Lab., Hsinchu, Taiwan

fYear

2015

fDate

19-22 April 2015

Firstpage

1

Lastpage

4

Abstract

This paper presents the packaging and residual stress effects on three-axis silicon-on-insulator (SOI) micro-electro-mechanical system (MEMS) accelerometer by using finite element method (FEM). The 3D FEM model was established and the resonance frequency was obtained by modal analysis method. This paper also developed a simple compensation model for trimming the offset of capacitance differentiation by measuring resonance frequency. It can be trimmed by adjusting application-specific integrated circuit (ASIC) gain. The capacitance differentiation offset which is caused by packaging effect can be effectively compensated to the standard capacitance differentiation.

Keywords

accelerometers; electronics packaging; finite element analysis; microsensors; silicon-on-insulator; 3D FEM model; ASIC gain; application-specific integrated circuit; capacitance differentiation offset; compensation model; finite element method; modal analysis method; packaging effects; residual stress effects; resonance frequency; silicon-on-insulator microelectromechanical system accelerometer; three-axis SOI MEMS accelerometer; Application specific integrated circuits; Frequency measurement; Packaging; Sensitivity; Springs; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2015 16th International Conference on

Conference_Location

Budapest

Print_ISBN

978-1-4799-9949-1

Type

conf

DOI

10.1109/EuroSimE.2015.7103101

Filename

7103101