A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology

Author

Kwon, U. ; Wong, K. ; Krishnan, S.A. ; Econimikos, L. ; Zhang, X. ; Ortolland, C. ; Thanh, L.D. ; Laloe, J. -B ; Huang, J.Y. ; Edge, L.F. ; Wang, H.M. ; Gribelyuk, M.A. ; Rath, D.L. ; Bingert, R. ; Liu, Y. ; Bao, R. ; Kim, I. ; Ramachandran, R. ; Lai, W.L

Author_Institution

Microelectron. Div., IBM, Hopewell Junction, NY, USA

fYear

2012

fDate

12-14 June 2012

Firstpage

29

Lastpage

30

Abstract

Replacement metal gate (RMG) process requires gate fill with low resistance materials on top of work function tuning metals. Conventional titanium (Ti)-aluminum (Al) based RMG metal fill scheme for low resistance gate formation becomes challenging with further gate length scaling for 20nm node and beyond. In this work, we have demonstrated competitive low resistance gate formation at smaller than 25nm L_gate using a novel cobalt (Co)-aluminum based metal fill scheme for extreme gate length scaling. Challenges in CMP for the implementation as well as assessment on resistance and device characteristics of this new low resistance fill scheme are also discussed.

Keywords

CMOS integrated circuits; RMG process; extreme gate length scaling; high-k/metal gate CMOS technology; low resistance gate fill; metal fill; replacement metal gate; Corrosion; Gate leakage; Logic gates; Metals; Resistance; USA Councils; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242445

Filename

6242445