Advanced semiconductor modeling using the EMTP

Author

Samihoeto ; Velasco, J. A Martinez ; Capolino, G.A.

Author_Institution

Inst. Mediterraneen de Technol., Marseille, France

fYear

1994

fDate

7-10 Aug 1994

Firstpage

340

Lastpage

345

Abstract

Advanced models of two semiconductor devices, the diode and IGBT, have been developed using a general purpose program, the Electromagnetic Transients Program (EMTP). These models are based on semiconductor physics and reproduce with high accuracy their behaviour during switching phenomena. The aim of this paper is to present a short summary of EMTP capabilities and detail the approach used for the development of advanced semiconductor models. Simulation results show the effectiveness of the representation developed in this work

Keywords

bipolar transistor switches; digital simulation; electronic engineering computing; insulated gate bipolar transistors; power bipolar transistors; power engineering computing; power semiconductor diodes; power semiconductor switches; semiconductor device models; software packages; EMTP; Electromagnetic Transients Program; IGBT; accuracy; computer simulation; diode; models; semiconductor modeling; switching phenomena; EMTP; Electric resistance; Equations; Insulated gate bipolar transistors; Power electronics; Power system simulation; Power system transients; Semiconductor devices; Semiconductor diodes; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers in Power Electronics, 1994., IEEE 4th Workshop on

Conference_Location

Trois-Rivieres, Que.

Print_ISBN

0-7803-2091-3

Type

conf

DOI

10.1109/CIPE.1994.396695

Filename

396695