DocumentCode
2644012
Title
Statistical simulation of high-frequency bipolar circuits
Author
Schneider, W. ; Schroter, M. ; Kraus, W. ; Wittkopf, H.
Author_Institution
Atmel Germany, Heilbronn
fYear
2007
fDate
16-20 April 2007
Firstpage
1
Lastpage
6
Abstract
This paper describes a physics-based methodology for computationally efficient statistical modeling of high-frequency bipolar transistors along with its practical implementation into a production process design kit. Applications to statistical modeling, circuit simulation, and yield optimization are demonstrated for an opamp circuit. Experimental results are shown that verify the methodology
Keywords
bipolar transistors; circuit simulation; operational amplifiers; semiconductor device models; statistical analysis; circuit simulation; high-frequency bipolar circuits; opamp circuit; physics-based methodology; production process design; statistical simulation; yield optimization; Circuit simulation; Computational modeling; Equations; Integrated circuit modeling; Phase change materials; Predictive models; Process design; Production; Semiconductor device modeling; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Automation & Test in Europe Conference & Exhibition, 2007. DATE '07
Conference_Location
Nice
Print_ISBN
978-3-9810801-2-4
Type
conf
DOI
10.1109/DATE.2007.364493
Filename
4212003
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