DocumentCode
2644050
Title
Performance of Avalanche Diode Oscillators with Large Leakage Current
Author
Gutmann, R.J. ; Borrego, J.M.
Volume
74
Issue
1
fYear
1974
fDate
12-14 June 1974
Firstpage
306
Lastpage
308
Abstract
Experimental results of the RF performance of 500 milliwatt CW, X-band IMPATT diode oscillators and 30 watt pulsed, S-band TRAPATT diode oscillators with large leakage current are presented. The leakage current was varied from 10 microamps to 10 milliamps by varying the dose rate of high energy electrons from a linear accelerator. Correlation obtained with device models indicate that the principal effects of leakage current on avalanche diode oscillator characteristics have been properly identified.
Keywords
Current measurement; Diodes; Electron traps; Equivalent circuits; Leakage current; Linear accelerators; Oscillators; Radio frequency; Testing; Thermal quenching;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location
Atlanta, Georgia, USA
Type
conf
DOI
10.1109/MWSYM.1974.1123583
Filename
1123583
Link To Document