DocumentCode
2644122
Title
A Low Noise 80 GHz Silicon IMPATT Oscillator Highly Stabilized with a Transmission Cavity
Author
Nagano, S. ; Ohnaka, S. ; Sekido, K. ; Ayaki, K.
Volume
74
Issue
1
fYear
1974
fDate
12-14 June 1974
Firstpage
323
Lastpage
326
Abstract
Design consideration and experimental performance of a new transmission-cavity-controlled silicon IMPATT diode oscillator for millimeter wavelength are described. The oscillator has the frequency stability of 1 x 10/sup -4/ over temperature variation 0/spl deg/ - 50/spl deg/C and remarkably improved noise characteristics, and is free from troublesome moding problems. Discussion is made on the circuit design that satisfies frequency stabilization, noise reduction, mode stabilization and increase of circuit efficiency.
Keywords
Circuit noise; Circuit stability; Circuit synthesis; Diodes; Frequency; Millimeter wave circuits; Noise reduction; Oscillators; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location
Atlanta, Georgia, USA
Type
conf
DOI
10.1109/MWSYM.1974.1123589
Filename
1123589
Link To Document