DocumentCode
2644370
Title
High Pulse Energy F-Band TRAPATT Diode Amplifiers
Author
Bowen, J.H. ; Breese, M.E. ; Mikenas, V.A. ; Schwarzmann, A. ; Liu, S.G. ; Sobol, H.
Volume
74
Issue
1
fYear
1974
fDate
12-14 June 1974
Firstpage
362
Lastpage
364
Abstract
Design considerations in building high-power wide-pulse-width TRAPATT diode amplifiers are outlined. Diode characteristics, package parasitic, and circuit impedance levels are discussed. Analytical and experimental investigations of the transient thermal behavior of TRAPATT diodes are presented. Performance characteristics of several MIC alumina substrate amplifiers are described.
Keywords
Capacitors; Circuits; Heat sinks; High power amplifiers; Plasma temperature; Power generation; Pulse amplifiers; Radar; Semiconductor diodes; Space vector pulse width modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location
Atlanta, Georgia, USA
Type
conf
DOI
10.1109/MWSYM.1974.1123604
Filename
1123604
Link To Document