• DocumentCode
    2644479
  • Title

    III-VI Interfacial Compounds

  • Author

    Kobayashi, M. ; Menke, D.R. ; Gunshor, R.L. ; Li, D. ; Nakamura, Y. ; Otsuka, N.

  • Author_Institution
    School of Electrical Engineering, Purdue University
  • fYear
    1991
  • fDate
    29 Jul-2 Aug 1991
  • Firstpage
    51
  • Lastpage
    52
  • Keywords
    Capacitance-voltage characteristics; Chemicals; Energy resolution; Gallium arsenide; Heterojunctions; III-V semiconductor materials; Plasmons; Shape; Superlattices; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
  • Print_ISBN
    0-87942-618-7
  • Type

    conf

  • DOI
    10.1109/LEOSST.1991.638943
  • Filename
    638943