Multi-layer sidewall WOX resistive memory suitable for 3D ReRAM

Author

Chien, W.C. ; Lee, F.M. ; Lin, Y.Y. ; Lee, M.H. ; Chen, S.H. ; Hsieh, C.C. ; Lai, E.K. ; Hui, H.H. ; Huang, Y.K. ; Yu, C.C. ; Chen, C.F. ; Lung, H.L. ; Hsieh, K.Y. ; Lu, Chih-Yuan

Author_Institution

Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan

fYear

2012

fDate

12-14 June 2012

Firstpage

153

Lastpage

154

Abstract

An easy to fabricate, low-cost, multi-layer sidewall WO_X ReRAM device is proposed for 3D ReRAM application. A 2-layer (10nm × 100nm) device is fabricated and characterized for the first time. The WOX is grown by conventional RTO process but a special semi-permeable TiN (SP-TiN) is developed to achieve the necessary extrusion-free structure for 3D ReRAM. The multi-layer sidewall WO_X ReRAM devices show characteristics similar to planar devices, but the reasons for layer-to-layer variation and some performance degradation still need to be understood.

Keywords

random-access storage; titanium compounds; tungsten compounds; 2-layer device; 3D ReRAM application; RTO process; TiN; WO_x; extrusion-free structure; layer-to-layer variation; multilayer sidewall ReRAM device; multilayer sidewall resistive memory; planar device; semi-permeable TiN; Abstracts; Electric breakdown; Random access memory; Switches; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242507

Filename

6242507