Package effects on avalanche rating of power MOSFETs

Author

McShane, E. ; Shenai, K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

fYear

2000

fDate

2000

Firstpage

93

Lastpage

96

Abstract

Device avalanche rating is a common figure of merit for comparing packaged parts. The rating has been shown to be affected by internal thermal dynamics. These dynamics can be influenced by the package thermal properties. The effect of package thermal performance on avalanche rating is investigated and a compact analytical expression to obtain the avalanche current is described

Keywords

avalanche breakdown; failure analysis; power MOSFET; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; semiconductor device packaging; semiconductor device reliability; thermal management (packaging); avalanche current; avalanche rating; device avalanche rating; figure of merit; internal thermal dynamics; package effects; package thermal performance; package thermal properties; packaged parts; power MOSFETs; Capacitance; Current density; Electronic packaging thermal management; Impact ionization; Inductors; MOSFETs; Microwave integrated circuits; Numerical simulation; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Power Packaging, 2000. IWIPP 2000. International Workshop on

Conference_Location

Waltham, MA

Print_ISBN

0-7803-6437-6

Type

conf

DOI

10.1109/IWIPP.2000.885189

Filename

885189