DocumentCode
2648471
Title
The GaAs TUNNETT Diodes
Author
Nishizawa, J. ; Motoya, K. ; Okuno, Y.
fYear
1978
fDate
27-29 June 1978
Firstpage
159
Lastpage
161
Abstract
The Tunnel injection transit time (Tunnett) diode operates in higher frequency region and with lower noise level than that of the Impatt diode. In thin carrier generating region, the tunnel injection which depends steeply on the electric field intensity over 1000 kV/cm, where the ionization of carriers can be neglected, leads to the higher efficiency operation of the Tunnett than that of the Impatt. GaAs Tunnett diodes with p+n and p+nn+ structure have been fabricated by a new LPE method (TDM under CVP). The fundamental oscillation at the frequency from about 100 GHz up to 248 GHz has been obtained from the p+nn+ diode.
Keywords
Charge carrier processes; Dispersion; Frequency estimation; Gallium arsenide; Ionization; Noise level; Semiconductor diodes; Time division multiplexing; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123822
Filename
1123822
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