DocumentCode
2649685
Title
High Power V-Band Double Drift IMPATT Amplifier
Author
Weller, K.P. ; English, D.L. ; Nakaji, E.M.
fYear
1978
fDate
27-29 June 1978
Firstpage
369
Lastpage
371
Abstract
A 490 mW circulator-coupled IMPATT reflection amplifier with 6.9 dB gain at 59.25 GHz and 1.9 GHz bandwidth for 1 dB rolloff has been developed using double-drift IMPATT diodes on diamond in a novel circuit designed to minimize subharmonic instabilities.
Keywords
Circuits; Coaxial components; Diodes; Frequency; High power amplifiers; Operational amplifiers; Packaging; Power amplifiers; Power generation; Reflection;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123894
Filename
1123894
Link To Document