DocumentCode
2649711
Title
Surface-Oriented Transferred-Electron Devices
Author
Shur, M.S. ; Eastman, L.F.
fYear
1978
fDate
27-29 June 1978
Firstpage
375
Lastpage
377
Abstract
The application of MESFET technology to manufacturing of surface-oriented transferred electron devices is discussed. The limitations related to the contact resistance, fringing capacitance and domain formation time are analysed for GaAs and InP devices. It is shown that power-delay products for GaAs surface-oriented TED´s might ben comparable to power-delay products for GaAs MESFET´s.
Keywords
Capacitance; Contact resistance; Frequency estimation; Gallium arsenide; Gunn devices; Indium phosphide; Integrated circuit technology; MESFETs; Manufacturing; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123896
Filename
1123896
Link To Document