DocumentCode
2649840
Title
Cryogenic Millimeter-Wave Receiver Using Molecular Beam Epitaxy Diodes
Author
Linke, R.A. ; Schneider, M.V. ; Cho, A.Y.
fYear
1978
fDate
27-29 June 1978
Firstpage
396
Lastpage
398
Abstract
A millimeter-wave receiver has been designed and built for the 60-90 GHz frequency band using GaAs mixer diodes prepared by molecular beam epitaxy (MBE). The devices are mounted in a reduced height waveguide mixer which is followed by a cooled parametric amplifier. At 18 K the receiver shows a total single sideband system temperature of 310 K at a frequency of 81 GHz. This is the lowest system temperature ever reported for a receiver built with a resistive diode mixer.
Keywords
Cryogenics; Diodes; Frequency; Gallium arsenide; Inductors; Millimeter wave transistors; Molecular beam epitaxial growth; Receiving antennas; Temperature; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123903
Filename
1123903
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