• DocumentCode
    2651673
  • Title

    Effect of interfacial states on the technological variability of trigate MOSFETs

  • Author

    González-Marín, E. ; Ruiz, F.G. ; Godoy, A. ; Tienda-Luna, I.M. ; Gámiz, F.

  • Author_Institution
    Dipt. Electron., Univ. de Granada, Granada, Spain
  • fYear
    2012
  • fDate
    10-11 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work studies the influence of the interfacial states on the performance of Trigate MOSFETs and, specifically, on the Subthreshold Swing (SS) and threshold voltage (VT) variability. To do so, a solver for the 2D Schrödinger-Poisson coupled equation system has been developed, including the effects of interfacial states (Dit). Different Dit(E) profiles have been considered, analyzing their influence for several device geometries.
  • Keywords
    MOSFET; Poisson equation; Schrodinger equation; interface states; 2D Schrodinger-Poisson coupled equation system; interfacial state effect; subthreshold swing variability; technological variability; threshold voltage variability; trigate MOSFET; Electrostatics; FETs; Geometry; Insulators; Logic gates; Mathematical model; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    2161-4636
  • Print_ISBN
    978-1-4673-0996-7
  • Electronic_ISBN
    2161-4636
  • Type

    conf

  • DOI
    10.1109/SNW.2012.6243295
  • Filename
    6243295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2651673