DocumentCode
2651749
Title
Evaluation of scattering in asymmetric quasi-ballistic DG-MOSFET
Author
Liu, Gai ; Du, Gang ; Lu, Tiao ; Liu, Xiaoyan ; Zhang, Pingwen ; Zhang, Xing
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2012
fDate
10-11 June 2012
Firstpage
1
Lastpage
2
Abstract
Quasi-ballistic asymmetric DG-MOSFET has been simulated using a multi-subband Boltzmann transport equation solver and important parameters regarding to back-scattering at the top of barrier are carefully studied in this work. It is observed that the simulated results are in good agreement with established theory and phonon scattering still plays an important role in limiting the performance of MOSFET even when gate length is scaled down to sub-10nm.
Keywords
Boltzmann equation; MOSFET; gate length; multisubband Boltzmann transport equation solver; phonon scattering; quasiballistic DG-MOSFET; scattering evaluation; Educational institutions; Electric potential; Logic gates; MOSFET circuits; Mathematical model; Phonons; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location
Honolulu, HI
ISSN
2161-4636
Print_ISBN
978-1-4673-0996-7
Electronic_ISBN
2161-4636
Type
conf
DOI
10.1109/SNW.2012.6243301
Filename
6243301
Link To Document