• DocumentCode
    2652029
  • Title

    Experimental demonstration of temperature stability of Si-tunnel FET over Si-MOSFET

  • Author

    Migita, Shinji ; Fukuda, Koichi ; Morita, Yukinori ; Ota, Hiroyuki

  • Author_Institution
    Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2012
  • fDate
    10-11 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Temperature dependences of tunnel field-effect transistor (TFET) and MOSFET were experimentally compared on the same SOI wafer. Validity of the TFET result was corroborated by simulation. It is demonstrated that VTH shift and off-current increment of Si-TFET with temperature were smaller in comparison with Si-MOSFET. Temperature stability of TFET is promising for ultra-low power VLSI.
  • Keywords
    MOSFET; elemental semiconductors; silicon; MOSFET; Si; TFET; experimental demonstration; off-current increment; temperature dependences; temperature stability; tunnel field-effect transistor; ultralow power VLSI; MOSFET circuits; Photonic band gap; Stability analysis; Temperature; Temperature dependence; Thermal stability; Tunneling; MOSFET; SOI; temperature dependence; threshold voltage; tunnel FET; ultra-low power VLSI;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    2161-4636
  • Print_ISBN
    978-1-4673-0996-7
  • Electronic_ISBN
    2161-4636
  • Type

    conf

  • DOI
    10.1109/SNW.2012.6243315
  • Filename
    6243315
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652029