• DocumentCode
    2652219
  • Title

    Counter dipole layer formation in SiO2/high-k/SiO2/Si gate stacks

  • Author

    Hibino, S. ; Nishimura, T. ; Nagashio, K. ; Kita, K. ; Toriumi, A.

  • Author_Institution
    Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2012
  • fDate
    10-11 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper presents experimental results of the counter dipole formation in SiO2/high-k (Al2O3 and Y2O3)/SiO2/Si gate stacks for the first time. The results definitely support the high-k/SiO2 interface dipole layer formation in metal/high-k gate CMOS.
  • Keywords
    CMOS integrated circuits; alumina; elemental semiconductors; high-k dielectric thin films; pulsed laser deposition; semiconductor-insulator boundaries; silicon; silicon compounds; yttrium compounds; SiO2-Al2O3-SiO2-Si; SiO2-Y2O3-SiO2-Si; counter dipole layer formation; high-k gate stacks; high-k interface dipole layer formation; metal-high-k gate CMOS; pulsed laser deposition; Aluminum oxide; Dielectric films; Gold; High K dielectric materials; Logic gates; Radiation detectors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    2161-4636
  • Print_ISBN
    978-1-4673-0996-7
  • Electronic_ISBN
    2161-4636
  • Type

    conf

  • DOI
    10.1109/SNW.2012.6243325
  • Filename
    6243325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652219